Mikolajick T - Search Results

1

From Ferroelectric Material Optimization to Neuromorphic Devices.

Mikolajick T, Park MH, Begon-Lours L, Slesazeck S. Mikolajick T, et al. Adv Mater. 2023 Sep;35(37):e2206042. doi: 10.1002/adma.202206042. Epub 2023 Feb 3. Adv Mater. 2023. PMID: 36017895 Review.

2

Reconfigurable silicon nanowire transistors.

Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM. Heinzig A, et al. Among authors: mikolajick t. Nano Lett. 2012 Jan 11;12(1):119-24. doi: 10.1021/nl203094h. Epub 2011 Dec 1. Nano Lett. 2012. PMID: 22111808

3

Local ion irradiation-induced resistive threshold and memory switching in Nb2O5/NbO(x) films.

Wylezich H, Mähne H, Rensberg J, Ronning C, Zahn P, Slesazeck S, Mikolajick T. Wylezich H, et al. Among authors: mikolajick t. ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17474-80. doi: 10.1021/am5021149. Epub 2014 Sep 30. ACS Appl Mater Interfaces. 2014. PMID: 25212179

4

Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

Martin D, Müller J, Schenk T, Arruda TM, Kumar A, Strelcov E, Yurchuk E, Müller S, Pohl D, Schröder U, Kalinin SV, Mikolajick T. Martin D, et al. Among authors: mikolajick t. Adv Mater. 2014 Dec 23;26(48):8198-202. doi: 10.1002/adma.201403115. Epub 2014 Oct 28. Adv Mater. 2014. PMID: 25352107

5

Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

You T, Du N, Slesazeck S, Mikolajick T, Li G, Bürger D, Skorupa I, Stöcker H, Abendroth B, Beyer A, Volz K, Schmidt OG, Schmidt H. You T, et al. Among authors: mikolajick t. ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19758-65. doi: 10.1021/am504871g. Epub 2014 Nov 14. ACS Appl Mater Interfaces. 2014. PMID: 25366867

6

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

Park MH, Lee YH, Kim HJ, Kim YJ, Moon T, Kim KD, Müller J, Kersch A, Schroeder U, Mikolajick T, Hwang CS. Park MH, et al. Among authors: mikolajick t. Adv Mater. 2015 Mar 18;27(11):1811-31. doi: 10.1002/adma.201404531. Epub 2015 Feb 11. Adv Mater. 2015. PMID: 25677113

7

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

Mulaosmanovic H, Ocker J, Müller S, Schroeder U, Müller J, Polakowski P, Flachowsky S, van Bentum R, Mikolajick T, Slesazeck S. Mulaosmanovic H, et al. Among authors: mikolajick t. ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3792-3798. doi: 10.1021/acsami.6b13866. Epub 2017 Jan 24. ACS Appl Mater Interfaces. 2017. PMID: 28071052

8

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment.

Park MH, Lee YH, Kim HJ, Schenk T, Lee W, Kim KD, Fengler FPG, Mikolajick T, Schroeder U, Hwang CS. Park MH, et al. Among authors: mikolajick t. Nanoscale. 2017 Jul 20;9(28):9973-9986. doi: 10.1039/c7nr02121f. Nanoscale. 2017. PMID: 28681890

9

Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.

Park MH, Lee YH, Kim HJ, Kim YJ, Moon T, Kim KD, Hyun SD, Mikolajick T, Schroeder U, Hwang CS. Park MH, et al. Among authors: mikolajick t. Nanoscale. 2018 Jan 3;10(2):716-725. doi: 10.1039/c7nr06342c. Nanoscale. 2018. PMID: 29242881

10

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

Schroeder U, Richter C, Park MH, Schenk T, Pešić M, Hoffmann M, Fengler FPG, Pohl D, Rellinghaus B, Zhou C, Chung CC, Jones JL, Mikolajick T. Schroeder U, et al. Among authors: mikolajick t. Inorg Chem. 2018 Mar 5;57(5):2752-2765. doi: 10.1021/acs.inorgchem.7b03149. Epub 2018 Feb 15. Inorg Chem. 2018. PMID: 29446630

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