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Year | Number of Results |
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2019 | 1 |
2020 | 1 |
2023 | 1 |
2024 | 0 |
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Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties.
J Appl Crystallogr. 2023 May 29;56(Pt 3):776-786. doi: 10.1107/S1600576723003291. eCollection 2023 Jun 1.
J Appl Crystallogr. 2023.
PMID: 37284267
Free PMC article.
Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals.
Gradwohl KP, Danilewsky AN, Roder M, Schmidbauer M, Janicskó-Csáthy J, Gybin A, Abrosimov N, Sumathi RR.
Gradwohl KP, et al. Among authors: roder m.
J Appl Crystallogr. 2020 Jun 12;53(Pt 4):880-884. doi: 10.1107/S1600576720005993. eCollection 2020 Aug 1.
J Appl Crystallogr. 2020.
PMID: 32788899
Free PMC article.
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Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.
Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann PJ.
Steiner J, et al. Among authors: roder m.
Materials (Basel). 2019 Jul 9;12(13):2207. doi: 10.3390/ma12132207.
Materials (Basel). 2019.
PMID: 31323918
Free PMC article.
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