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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: germain m.
Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101.
Micromachines (Basel). 2020.
PMID: 31963553
Free PMC article.
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