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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration.
Nanomaterials (Basel). 2022 Dec 14;12(24):4449. doi: 10.3390/nano12244449.
Nanomaterials (Basel). 2022.
PMID: 36558302
Free PMC article.
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures.
Timofeev VA, Nikiforov AI, Tuktamyshev AR, Mashanov VI, Loshkarev ID, Bloshkin AA, Gutakovskii AK.
Timofeev VA, et al. Among authors: loshkarev id.
Nanotechnology. 2018 Apr 2;29(15):154002. doi: 10.1088/1361-6528/aaac45.
Nanotechnology. 2018.
PMID: 29388560
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