Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling.
Heo S, Park H, Ko DS, Kim YS, Kyoung YK, Lee HI, Cho E, Lee HS, Park GS, Shin JK, Lee D, Lee J, Jung K, Jeong M, Yamada S, Kang HJ, Choi BD.
Heo S, et al.
Sci Rep. 2017 Mar 2;7:43561. doi: 10.1038/srep43561.
Sci Rep. 2017.
PMID: 28252013
Free PMC article.