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Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces.
Opt Lett. 2018 Aug 1;43(15):3505-3508. doi: 10.1364/OL.43.003505.
Opt Lett. 2018.
PMID: 30067695
Free article.
Polarized cathodoluminescence for strain measurement.
Fouchier M, Rochat N, Pargon E, Landesman JP.
Fouchier M, et al. Among authors: landesman jp.
Rev Sci Instrum. 2019 Apr;90(4):043701. doi: 10.1063/1.5078506.
Rev Sci Instrum. 2019.
PMID: 31043017
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Polarimetric photoluminescence microscope for strain imaging on semiconductor devices.
Schaub E, Ahammou B, Landesman JP.
Schaub E, et al. Among authors: landesman jp.
Appl Opt. 2022 Feb 20;61(6):1307-1315. doi: 10.1364/AO.449825.
Appl Opt. 2022.
PMID: 35201011
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Commensurate and incommensurate phases at reconstructed (In,Ga)As(001) surfaces: x-ray diffraction evidence for a composition lock-in.
Sauvage-Simkin M, Garreau Y, Pinchaux R, Véron MB, Landesman JP, Nagle J.
Sauvage-Simkin M, et al. Among authors: landesman jp.
Phys Rev Lett. 1995 Nov 6;75(19):3485-3488. doi: 10.1103/PhysRevLett.75.3485.
Phys Rev Lett. 1995.
PMID: 10059598
No abstract available.
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Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions.
Leroux M, Fille ML, Gil B, Landesman JP, Garcia JC.
Leroux M, et al. Among authors: landesman jp.
Phys Rev B Condens Matter. 1993 Mar 15;47(11):6465-6469. doi: 10.1103/physrevb.47.6465.
Phys Rev B Condens Matter. 1993.
PMID: 10004614
No abstract available.
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Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy.
Arnaud G, Boring P, Gil B, Garcia JC, Landesman JP, Leroux M.
Arnaud G, et al. Among authors: landesman jp.
Phys Rev B Condens Matter. 1992 Jul 15;46(3):1886-1888. doi: 10.1103/physrevb.46.1886.
Phys Rev B Condens Matter. 1992.
PMID: 10003849
No abstract available.
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