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Influence of the dielectric environment on the photoluminescence intermittency of CdSe quantum dots.
Chemphyschem. 2012 Sep 17;13(13):3223-30. doi: 10.1002/cphc.201101040. Epub 2012 Jun 29.
Chemphyschem. 2012.
PMID: 22753139
Photoinduced hole trapping in single semiconductor quantum dots at specific sites at silicon oxide interfaces.
Krasselt C, Schuster J, von Borczyskowski C.
Krasselt C, et al.
Phys Chem Chem Phys. 2011 Oct 14;13(38):17084-92. doi: 10.1039/c1cp22040c. Epub 2011 Aug 22.
Phys Chem Chem Phys. 2011.
PMID: 21860851
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The fluorescence intermittency for quantum dots is not power-law distributed: a luminescence intensity resolved approach.
Schmidt R, Krasselt C, Göhler C, von Borczyskowski C.
Schmidt R, et al. Among authors: krasselt c.
ACS Nano. 2014 Apr 22;8(4):3506-21. doi: 10.1021/nn406562a. Epub 2014 Mar 7.
ACS Nano. 2014.
PMID: 24580107
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Tuning electronic states of a CdSe/ZnS quantum dot by only one functional dye molecule.
Zenkevich E, Stupak A, Göhler C, Krasselt C, von Borczyskowski C.
Zenkevich E, et al. Among authors: krasselt c.
ACS Nano. 2015 Mar 24;9(3):2886-903. doi: 10.1021/nn506941c. Epub 2015 Mar 11.
ACS Nano. 2015.
PMID: 25703788
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