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Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: kang k. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
Area-selective atomic layer deposition on 2D monolayer lateral superlattices.
Park J, Kwak SJ, Kang S, Oh S, Shin B, Noh G, Kim TS, Kim C, Park H, Oh SH, Kang W, Hur N, Chai HJ, Kang M, Kwon S, Lee J, Lee Y, Moon E, Shi C, Lou J, Lee WB, Kwak JY, Yang H, Chung TM, Eom T, Suh J, Han Y, Jeong HY, Kim Y, Kang K. Park J, et al. Among authors: kang k. Nat Commun. 2024 Mar 8;15(1):2138. doi: 10.1038/s41467-024-46293-w. Nat Commun. 2024. PMID: 38459015 Free PMC article.
Using 4D-STEM to Map 3D Morphologies of 2D Materials.
Mireles A, Shi C, Park J, Shin B, Sung SH, Ophus C, Hovden R, Kang K, Han Y. Mireles A, et al. Among authors: kang k. Microsc Microanal. 2023 Jul 22;29(Supplement_1):262-263. doi: 10.1093/micmic/ozad067.118. Microsc Microanal. 2023. PMID: 37613234 No abstract available.
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9.
Noh G, Song H, Choi H, Kim M, Jeong JH, Lee Y, Choi MY, Oh S, Jo MK, Woo DY, Jo Y, Park E, Moon E, Kim TS, Chai HJ, Huh W, Lee CH, Kim CJ, Yang H, Song S, Jeong HY, Kim YS, Lee GH, Lim J, Kim CG, Chung TM, Kwak JY, Kang K. Noh G, et al. Among authors: kang k. Adv Mater. 2022 Oct;34(41):e2204982. doi: 10.1002/adma.202204982. Epub 2022 Sep 9. Adv Mater. 2022. PMID: 36000232
41 results