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Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements.
Adv Mater. 2023 May;35(21):e2210916. doi: 10.1002/adma.202210916. Epub 2023 Apr 5.
Adv Mater. 2023.
PMID: 36848627
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors.
Fiore S, Klinkert C, Ducry F, Backman J, Luisier M.
Fiore S, et al. Among authors: backman j.
Materials (Basel). 2022 Jan 29;15(3):1062. doi: 10.3390/ma15031062.
Materials (Basel). 2022.
PMID: 35161006
Free PMC article.
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