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Page 1
Vertical GaN MOSFET Power Devices.
Langpoklakpam C, Liu AC, Hsiao YK, Lin CH, Kuo HC. Langpoklakpam C, et al. Among authors: hsiao yk. Micromachines (Basel). 2023 Oct 16;14(10):1937. doi: 10.3390/mi14101937. Micromachines (Basel). 2023. PMID: 37893374 Free PMC article. Review.
State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics.
Liu AC, Hsieh CH, Langpoklakpam C, Singh KJ, Lee WC, Hsiao YK, Horng RH, Kuo HC, Tu CC. Liu AC, et al. Among authors: hsiao yk. ACS Omega. 2022 Oct 7;7(41):36070-36091. doi: 10.1021/acsomega.2c03345. eCollection 2022 Oct 18. ACS Omega. 2022. PMID: 36278089 Free PMC article. Review.
Baryon decays to purely baryonic final states.
Hsiao YK, Geng CQ, Rodrigues E. Hsiao YK, et al. Sci Rep. 2019 Feb 4;9(1):1358. doi: 10.1038/s41598-018-37743-9. Sci Rep. 2019. PMID: 30718706 Free PMC article.
Direct CP violation in B(-/+) --> ppK((*)+/-).
Geng CQ, Hsiao YK, Ng JN. Geng CQ, et al. Among authors: hsiao yk. Phys Rev Lett. 2007 Jan 5;98(1):011801. doi: 10.1103/PhysRevLett.98.011801. Epub 2007 Jan 5. Phys Rev Lett. 2007. PMID: 17358467