Heyns M - Search Results

1

Reconfigurable submicrometer spin-wave majority gate with electrical transducers.

Talmelli G, Devolder T, Träger N, Förster J, Wintz S, Weigand M, Stoll H, Heyns M, Schütz G, Radu IP, Gräfe J, Ciubotaru F, Adelmann C. Talmelli G, et al. Among authors: heyns m. Sci Adv. 2020 Dec 18;6(51):eabb4042. doi: 10.1126/sciadv.abb4042. Print 2020 Dec. Sci Adv. 2020. PMID: 33355122 Free article.

2

Switching mechanism in two-terminal vanadium dioxide devices.

Radu IP, Govoreanu B, Mertens S, Shi X, Cantoro M, Schaekers M, Jurczak M, De Gendt S, Stesmans A, Kittl JA, Heyns M, Martens K. Radu IP, et al. Among authors: heyns m. Nanotechnology. 2015 Apr 24;26(16):165202. doi: 10.1088/0957-4484/26/16/165202. Epub 2015 Mar 27. Nanotechnology. 2015. PMID: 25815433 Free article.

3

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

Nourbakhsh A, Adelmann C, Song Y, Lee CS, Asselberghs I, Huyghebaert C, Brizzi S, Tallarida M, Schmeisser D, Van Elshocht S, Heyns M, Kong J, Palacios T, De Gendt S. Nourbakhsh A, et al. Among authors: heyns m. Nanoscale. 2015 Jun 28;7(24):10781-9. doi: 10.1039/c5nr01128k. Epub 2015 Jun 3. Nanoscale. 2015. PMID: 26036353 Free article.

4

Highly efficient and stable MoS₂ FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating.

Lockhart de la Rosa CJ, Nourbakhsh A, Heyne M, Asselberghs I, Huyghebaert C, Radu I, Heyns M, De Gendt S. Lockhart de la Rosa CJ, et al. Among authors: heyns m. Nanoscale. 2017 Jan 7;9(1):258-265. doi: 10.1039/c6nr06980k. Epub 2016 Dec 1. Nanoscale. 2017. PMID: 27906404

5

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes.

Agarwal TK, Soree B, Radu I, Raghavan P, Iannaccone G, Fiori G, Dehaene W, Heyns M. Agarwal TK, et al. Among authors: heyns m. Sci Rep. 2017 Jul 10;7(1):5016. doi: 10.1038/s41598-017-04055-3. Sci Rep. 2017. PMID: 28694459 Free PMC article.

6

From the metal to the channel: a study of carrier injection through the metal/2D MoS₂ interface.

Arutchelvan G, Lockhart de la Rosa CJ, Matagne P, Sutar S, Radu I, Huyghebaert C, De Gendt S, Heyns M. Arutchelvan G, et al. Among authors: heyns m. Nanoscale. 2017 Aug 3;9(30):10869-10879. doi: 10.1039/c7nr02487h. Nanoscale. 2017. PMID: 28731082

7

Electrically Driven Unidirectional Optical Nanoantennas.

Gurunarayanan SP, Verellen N, Zharinov VS, James Shirley F, Moshchalkov VV, Heyns M, Van de Vondel J, Radu IP, Van Dorpe P. Gurunarayanan SP, et al. Among authors: heyns m. Nano Lett. 2017 Dec 13;17(12):7433-7439. doi: 10.1021/acs.nanolett.7b03312. Epub 2017 Nov 2. Nano Lett. 2017. PMID: 29068692

8

Chemical vapor deposition of monolayer-thin WS₂ crystals from the WF₆ and H₂S precursors at low deposition temperature.

Groven B, Claes D, Nalin Mehta A, Bender H, Vandervorst W, Heyns M, Caymax M, Radu I, Delabie A. Groven B, et al. Among authors: heyns m. J Chem Phys. 2019 Mar 14;150(10):104703. doi: 10.1063/1.5048346. J Chem Phys. 2019. PMID: 30876349

9

Understanding ambipolar transport in MoS₂ field effect transistors: the substrate is the key.

Mootheri V, Leonhardt A, Verreck D, Asselberghs I, Huyghebaert C, de Gendt S, Radu I, Lin D, Heyns M. Mootheri V, et al. Among authors: heyns m. Nanotechnology. 2021 Jan 7;32(13):135202. doi: 10.1088/1361-6528/abd27a. Online ahead of print. Nanotechnology. 2021. PMID: 33410418

10

Impact of device scaling on the electrical properties of MoS₂ field-effect transistors.

Arutchelvan G, Smets Q, Verreck D, Ahmed Z, Gaur A, Sutar S, Jussot J, Groven B, Heyns M, Lin D, Asselberghs I, Radu I. Arutchelvan G, et al. Among authors: heyns m. Sci Rep. 2021 Mar 23;11(1):6610. doi: 10.1038/s41598-021-85968-y. Sci Rep. 2021. PMID: 33758215 Free PMC article.

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