Hatayama S - Search Results

1

Inverse Resistance Change Cr₂Ge₂Te₆-Based PCRAM Enabling Ultralow-Energy Amorphization.

Hatayama S, Sutou Y, Shindo S, Saito Y, Song YH, Ando D, Koike J. Hatayama S, et al. ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2725-2734. doi: 10.1021/acsami.7b16755. Epub 2018 Jan 10. ACS Appl Mater Interfaces. 2018. PMID: 29280374

2

Cr-Triggered Local Structural Change in Cr₂Ge₂Te₆ Phase Change Material.

Hatayama S, Shuang Y, Fons P, Saito Y, Kolobov AV, Kobayashi K, Shindo S, Ando D, Sutou Y. Hatayama S, et al. ACS Appl Mater Interfaces. 2019 Nov 20;11(46):43320-43329. doi: 10.1021/acsami.9b11535. Epub 2019 Nov 6. ACS Appl Mater Interfaces. 2019. PMID: 31647631

3

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications.

Shuang Y, Hatayama S, An J, Hong J, Ando D, Song Y, Sutou Y. Shuang Y, et al. Among authors: hatayama s. Sci Rep. 2019 Dec 27;9(1):20209. doi: 10.1038/s41598-019-56768-2. Sci Rep. 2019. PMID: 31882932 Free PMC article.

4

Reversible displacive transformation in MnTe polymorphic semiconductor.

Mori S, Hatayama S, Shuang Y, Ando D, Sutou Y. Mori S, et al. Among authors: hatayama s. Nat Commun. 2020 Jan 3;11(1):85. doi: 10.1038/s41467-019-13747-5. Nat Commun. 2020. PMID: 31900401 Free PMC article.

5

Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material.

Saito Y, Hatayama S, Shuang Y, Fons P, Kolobov AV, Sutou Y. Saito Y, et al. Among authors: hatayama s. Sci Rep. 2021 Mar 8;11(1):4782. doi: 10.1038/s41598-020-80301-5. Sci Rep. 2021. PMID: 33686108 Free PMC article.

6

Understanding the Origin of Low-Energy Operation Characteristics for Cr₂Ge₂Te₆ Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device.

Hatayama S, Yamamoto T, Mori S, Song YH, Sutou Y. Hatayama S, et al. ACS Appl Mater Interfaces. 2022 Oct 5;14(39):44604-44613. doi: 10.1021/acsami.2c13189. Epub 2022 Sep 23. ACS Appl Mater Interfaces. 2022. PMID: 36149674

7

Tunable pheromone interactions among microswimmers.

Nakayama B, Nagase H, Takahashi H, Saito Y, Hatayama S, Makino K, Yamamoto E, Saiki T. Nakayama B, et al. Among authors: hatayama s. Proc Natl Acad Sci U S A. 2023 Feb 28;120(9):e2213713120. doi: 10.1073/pnas.2213713120. Epub 2023 Feb 22. Proc Natl Acad Sci U S A. 2023. PMID: 36812202 Free PMC article.

8

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film.

Saito Y, Hatayama S, Chang WH, Okada N, Irisawa T, Uesugi F, Takeguchi M, Sutou Y, Fons P. Saito Y, et al. Among authors: hatayama s. Mater Horiz. 2023 Jun 6;10(6):2254-2261. doi: 10.1039/d2mh01449a. Mater Horiz. 2023. PMID: 37021482

9

NbTe₄ Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide.

Shuang Y, Chen Q, Kim M, Wang Y, Saito Y, Hatayama S, Fons P, Ando D, Kubo M, Sutou Y. Shuang Y, et al. Among authors: hatayama s. Adv Mater. 2023 Sep;35(39):e2303646. doi: 10.1002/adma.202303646. Epub 2023 Jul 30. Adv Mater. 2023. PMID: 37338024

10

Nonvolatile Isomorphic Valence Transition in SmTe Films.

Hatayama S, Mori S, Saito Y, Fons PJ, Shuang Y, Sutou Y. Hatayama S, et al. ACS Nano. 2024 Jan 30;18(4):2972-2981. doi: 10.1021/acsnano.3c07960. Epub 2024 Jan 16. ACS Nano. 2024. PMID: 38228321 Free PMC article.

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