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Ferroelectric-carbon nanotube memory devices.
Kumar A, Shivareddy SG, Correa M, Resto O, Choi Y, Cole MT, Katiyar RS, Scott JF, Amaratunga GA, Lu H, Gruverman A. Kumar A, et al. Among authors: gruverman a. Nanotechnology. 2012 Apr 27;23(16):165702. doi: 10.1088/0957-4484/23/16/165702. Epub 2012 Mar 30. Nanotechnology. 2012. PMID: 22460805
Mechanical writing of ferroelectric polarization.
Lu H, Bark CW, Esque de los Ojos D, Alcala J, Eom CB, Catalan G, Gruverman A. Lu H, et al. Among authors: gruverman a. Science. 2012 Apr 6;336(6077):59-61. doi: 10.1126/science.1218693. Science. 2012. PMID: 22491848
Ferroelectric tunnel memristor.
Kim DJ, Lu H, Ryu S, Bark CW, Eom CB, Tsymbal EY, Gruverman A. Kim DJ, et al. Among authors: gruverman a. Nano Lett. 2012 Nov 14;12(11):5697-702. doi: 10.1021/nl302912t. Epub 2012 Oct 11. Nano Lett. 2012. PMID: 23039785
Ferroelectric domain wall injection.
Whyte JR, McQuaid RG, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Whyte JR, et al. Among authors: gruverman a. Adv Mater. 2014 Jan 15;26(2):293-8. doi: 10.1002/adma.201303567. Epub 2013 Oct 18. Adv Mater. 2014. PMID: 24136810
94 results