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Emerging SiC Applications beyond Power Electronic Devices.
La Via F, Alquier D, Giannazzo F, Kimoto T, Neudeck P, Ou H, Roncaglia A, Saddow SE, Tudisco S. La Via F, et al. Among authors: giannazzo f. Micromachines (Basel). 2023 Jun 6;14(6):1200. doi: 10.3390/mi14061200. Micromachines (Basel). 2023. PMID: 37374785 Free PMC article. Review.
Correction to "Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate".
Panasci SE, Schilirò E, Greco G, Cannas M, Gelardi FM, Agnello S, Roccaforte F, Giannazzo F. Panasci SE, et al. Among authors: giannazzo f. ACS Appl Mater Interfaces. 2022 Aug 10;14(31):36287. doi: 10.1021/acsami.2c12608. Epub 2022 Jul 29. ACS Appl Mater Interfaces. 2022. PMID: 35905500 Free PMC article. No abstract available.
New Approaches and Understandings in the Growth of Cubic Silicon Carbide.
La Via F, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, Calabretta C, Giannazzo F, Zielinski M, Anzalone R, Mauceri M, Crippa D, Scalise E, Marzegalli A, Sarikov A, Miglio L, Jokubavicius V, Syväjärvi M, Yakimova R, Schuh P, Schöler M, Kollmuss M, Wellmann P. La Via F, et al. Among authors: giannazzo f. Materials (Basel). 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348. Materials (Basel). 2021. PMID: 34576572 Free PMC article. Review.
Selective Doping in Silicon Carbide Power Devices.
Roccaforte F, Fiorenza P, Vivona M, Greco G, Giannazzo F. Roccaforte F, et al. Among authors: giannazzo f. Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923. Materials (Basel). 2021. PMID: 34300845 Free PMC article. Review.
55 results