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Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors.
Materials (Basel). 2022 Jan 29;15(3):1062. doi: 10.3390/ma15031062.
Materials (Basel). 2022.
PMID: 35161006
Free PMC article.
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope.
Klinkert C, Szabó Á, Stieger C, Campi D, Marzari N, Luisier M.
Klinkert C, et al.
ACS Nano. 2020 Jul 28;14(7):8605-8615. doi: 10.1021/acsnano.0c02983. Epub 2020 Jun 24.
ACS Nano. 2020.
PMID: 32530608
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