Bougerol C - Search Results

1

Long indium-rich InGaAs nanowires by SAG-HVPE.

Chereau E, Grégoire G, Avit G, Taliercio T, Staudinger P, Schmid H, Bougerol C, Trassoudaine A, Gil E, LaPierre RR, André Y. Chereau E, et al. Among authors: bougerol c. Nanotechnology. 2024 Feb 19;35(19). doi: 10.1088/1361-6528/ad263a. Nanotechnology. 2024. PMID: 38316054

2

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.

Bougerol C, Songmuang R, Camacho D, Niquet YM, Mata R, Cros A, Daudin B. Bougerol C, et al. Nanotechnology. 2009 Jul 22;20(29):295706. doi: 10.1088/0957-4484/20/29/295706. Epub 2009 Jul 1. Nanotechnology. 2009. PMID: 19567953

3

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.

Landré O, Bougerol C, Renevier H, Daudin B. Landré O, et al. Among authors: bougerol c. Nanotechnology. 2009 Oct 14;20(41):415602. doi: 10.1088/0957-4484/20/41/415602. Epub 2009 Sep 16. Nanotechnology. 2009. PMID: 19755728

4

The structural properties of GaN/AlN core-shell nanocolumn heterostructures.

Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B. Hestroffer K, et al. Among authors: bougerol c. Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16. Nanotechnology. 2010. PMID: 20844326

5

Growth mechanism and properties of InGaN insertions in GaN nanowires.

Tourbot G, Bougerol C, Glas F, Zagonel LF, Mahfoud Z, Meuret S, Gilet P, Kociak M, Gayral B, Daudin B. Tourbot G, et al. Among authors: bougerol c. Nanotechnology. 2012 Apr 6;23(13):135703. doi: 10.1088/0957-4484/23/13/135703. Epub 2012 Mar 14. Nanotechnology. 2012. PMID: 22418250

6

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability.

Lekhal K, Avit G, André Y, Trassoudaine A, Gil E, Varenne C, Bougerol C, Monier G, Castelluci D. Lekhal K, et al. Among authors: bougerol c. Nanotechnology. 2012 Oct 12;23(40):405601. doi: 10.1088/0957-4484/23/40/405601. Epub 2012 Sep 14. Nanotechnology. 2012. PMID: 22983695

7

Growth, structural and optical properties of AlGaN nanowires in the whole composition range.

Pierret A, Bougerol C, Murcia-Mascaros S, Cros A, Renevier H, Gayral B, Daudin B. Pierret A, et al. Among authors: bougerol c. Nanotechnology. 2013 Mar 22;24(11):115704. doi: 10.1088/0957-4484/24/11/115704. Epub 2013 Mar 1. Nanotechnology. 2013. PMID: 23455374

8

Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence.

Pierret A, Bougerol C, Gayral B, Kociak M, Daudin B. Pierret A, et al. Among authors: bougerol c. Nanotechnology. 2013 Aug 2;24(30):305703. doi: 10.1088/0957-4484/24/30/305703. Epub 2013 Jul 2. Nanotechnology. 2013. PMID: 23818066

9

Ultralong and defect-free GaN nanowires grown by the HVPE process.

Avit G, Lekhal K, André Y, Bougerol C, Réveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A. Avit G, et al. Among authors: bougerol c. Nano Lett. 2014 Feb 12;14(2):559-62. doi: 10.1021/nl403687h. Epub 2014 Jan 10. Nano Lett. 2014. PMID: 24393103

10

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band.

Lim CB, Ajay A, Bougerol C, Haas B, Schörmann J, Beeler M, Lähnemann J, Eickhoff M, Monroy E. Lim CB, et al. Among authors: bougerol c. Nanotechnology. 2015 Oct 30;26(43):435201. doi: 10.1088/0957-4484/26/43/435201. Epub 2015 Oct 5. Nanotechnology. 2015. PMID: 26437371

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