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Showing results for batra i p
Search for Batrani P instead (1 results)
Gapless Peierls transition.
Batra IP. Batra IP. Phys Rev B Condens Matter. 1990 Nov 15;42(14):9162-9165. doi: 10.1103/physrevb.42.9162. Phys Rev B Condens Matter. 1990. PMID: 9995135 No abstract available.
Ciraci and Batra reply.
Ciraci S, Batra IP. Ciraci S, et al. Among authors: batra ip. Phys Rev Lett. 1988 Feb 8;60(6):547. doi: 10.1103/PhysRevLett.60.547. Phys Rev Lett. 1988. PMID: 10038579 No abstract available.
Atomic structure of the Si(001)-(2 x 1) surface.
Batra IP. Batra IP. Phys Rev B Condens Matter. 1990 Mar 15;41(8):5048-5054. doi: 10.1103/physrevb.41.5048. Phys Rev B Condens Matter. 1990. PMID: 9994361 No abstract available.
Metallization and Schottky-barrier formation.
Batra IP, Ciraci S. Batra IP, et al. Phys Rev B Condens Matter. 1986 Mar 15;33(6):4312-4314. doi: 10.1103/physrevb.33.4312. Phys Rev B Condens Matter. 1986. PMID: 9938867 No abstract available.
Molecular-dynamics study of self-interstitials in silicon.
Batra IP, Abraham FF, Ciraci S. Batra IP, et al. Phys Rev B Condens Matter. 1987 Jun 15;35(18):9552-9558. doi: 10.1103/physrevb.35.9552. Phys Rev B Condens Matter. 1987. PMID: 9941380 No abstract available.
delta doping in strained (Si)/(Ge) superlattices.
Ciraci S, Batra IP, Tekman E. Ciraci S, et al. Among authors: batra ip. Phys Rev B Condens Matter. 1988 Dec 15;38(17):12728-12731. doi: 10.1103/physrevb.38.12728. Phys Rev B Condens Matter. 1988. PMID: 9946234 No abstract available.
Metallization of silicon upon potassium adsorption.
Ciraci S, Batra IP. Ciraci S, et al. Among authors: batra ip. Phys Rev Lett. 1987 May 11;58(19):1982-1985. doi: 10.1103/PhysRevLett.58.1982. Phys Rev Lett. 1987. PMID: 10034589 No abstract available.
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