Baeumer C - Search Results

1

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices.

Baeumer C, Valenta R, Schmitz C, Locatelli A, Menteş TO, Rogers SP, Sala A, Raab N, Nemsak S, Shim M, Schneider CM, Menzel S, Waser R, Dittmann R. Baeumer C, et al. ACS Nano. 2017 Jul 25;11(7):6921-6929. doi: 10.1021/acsnano.7b02113. Epub 2017 Jul 6. ACS Nano. 2017. PMID: 28661649

2

Tunable carrier type and density in graphene/PbZr0.2Ti0.8O3 hybrid structures through ferroelectric switching.

Baeumer C, Rogers SP, Xu R, Martin LW, Shim M. Baeumer C, et al. Nano Lett. 2013 Apr 10;13(4):1693-8. doi: 10.1021/nl4002052. Epub 2013 Mar 22. Nano Lett. 2013. PMID: 23506048

3

Ferroelectrically driven spatial carrier density modulation in graphene.

Baeumer C, Saldana-Greco D, Martirez JM, Rappe AM, Shim M, Martin LW. Baeumer C, et al. Nat Commun. 2015 Jan 22;6:6136. doi: 10.1038/ncomms7136. Nat Commun. 2015. PMID: 25609217 Free article.

4

Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy.

Baeumer C, Xu C, Gunkel F, Raab N, Heinen RA, Koehl A, Dittmann R. Baeumer C, et al. Sci Rep. 2015 Jul 20;5:11829. doi: 10.1038/srep11829. Sci Rep. 2015. PMID: 26189436 Free PMC article.

5

Spectromicroscopic insights for rational design of redox-based memristive devices.

Baeumer C, Schmitz C, Ramadan AH, Du H, Skaja K, Feyer V, Müller P, Arndt B, Jia CL, Mayer J, De Souza RA, Michael Schneider C, Waser R, Dittmann R. Baeumer C, et al. Nat Commun. 2015 Oct 19;6:8610. doi: 10.1038/ncomms9610. Nat Commun. 2015. PMID: 26477940 Free PMC article.

6

Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices.

Baeumer C, Raab N, Menke T, Schmitz C, Rosezin R, Müller P, Andrä M, Feyer V, Bruchhaus R, Gunkel F, Schneider CM, Waser R, Dittmann R. Baeumer C, et al. Nanoscale. 2016 Aug 7;8(29):13967-75. doi: 10.1039/c6nr00824k. Epub 2016 Apr 18. Nanoscale. 2016. PMID: 27089047

7

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.

Baeumer C, Schmitz C, Marchewka A, Mueller DN, Valenta R, Hackl J, Raab N, Rogers SP, Khan MI, Nemsak S, Shim M, Menzel S, Schneider CM, Waser R, Dittmann R. Baeumer C, et al. Nat Commun. 2016 Aug 19;7:12398. doi: 10.1038/ncomms12398. Nat Commun. 2016. PMID: 27539213 Free PMC article.

8

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

Cooper D, Baeumer C, Bernier N, Marchewka A, La Torre C, Dunin-Borkowski RE, Menzel S, Waser R, Dittmann R. Cooper D, et al. Among authors: baeumer c. Adv Mater. 2017 Jun;29(23). doi: 10.1002/adma.201700212. Epub 2017 Apr 18. Adv Mater. 2017. PMID: 28417593

9

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules.

Heisig T, Baeumer C, Gries UN, Mueller MP, La Torre C, Luebben M, Raab N, Du H, Menzel S, Mueller DN, Jia CL, Mayer J, Waser R, Valov I, De Souza RA, Dittmann R. Heisig T, et al. Among authors: baeumer c. Adv Mater. 2018 Jun 7:e1800957. doi: 10.1002/adma.201800957. Online ahead of print. Adv Mater. 2018. PMID: 29882270

10

Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices.

Skaja K, Andrä M, Rana V, Waser R, Dittmann R, Baeumer C. Skaja K, et al. Among authors: baeumer c. Sci Rep. 2018 Jul 18;8(1):10861. doi: 10.1038/s41598-018-28992-9. Sci Rep. 2018. PMID: 30022129 Free PMC article.

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