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Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal.
Materials (Basel). 2019 Nov 6;12(22):3652. doi: 10.3390/ma12223652.
Materials (Basel). 2019.
PMID: 31698806
Free PMC article.
Influence of Morphological Changes in a Source Material on the Growth Interface of 4h-Sic Single Crystals.
Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann PJ.
Arzig M, et al.
Materials (Basel). 2019 Aug 14;12(16):2591. doi: 10.3390/ma12162591.
Materials (Basel). 2019.
PMID: 31416280
Free PMC article.
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