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Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.
Micromachines (Basel). 2022 Jul 12;13(7):1096. doi: 10.3390/mi13071096.
Micromachines (Basel). 2022.
PMID: 35888913
Free PMC article.
Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric.
Gao X, Guo H, Wang R, Pan D, Chen P, Chen D, Lu H, Zhang R, Zheng Y.
Gao X, et al.
Micromachines (Basel). 2022 Aug 26;13(9):1396. doi: 10.3390/mi13091396.
Micromachines (Basel). 2022.
PMID: 36144019
Free PMC article.
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