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Year | Number of Results |
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2021 | 2 |
2023 | 1 |
2024 | 0 |
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Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.
Sci Rep. 2023 May 31;13(1):8793. doi: 10.1038/s41598-023-35677-5.
Sci Rep. 2023.
PMID: 37258537
Free PMC article.
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN.
Kamarundzaman A, Abu Bakar AS, Azman A, Omar AZ, Talik NA, Supangat A, Abd Majid WH.
Kamarundzaman A, et al. Among authors: omar az.
Sci Rep. 2021 May 6;11(1):9724. doi: 10.1038/s41598-021-89201-8.
Sci Rep. 2021.
PMID: 33958689
Free PMC article.
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Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN.
Kamarundzaman A, Abu Bakar AS, Azman A, Omar AZ, Talik NA, Supangat A, Abd Majid WH.
Kamarundzaman A, et al. Among authors: omar az.
Sci Rep. 2021 Aug 11;11(1):16639. doi: 10.1038/s41598-021-96016-0.
Sci Rep. 2021.
PMID: 34381162
Free PMC article.
No abstract available.
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