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Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
Materials (Basel). 2019 Oct 10;12(20):3293. doi: 10.3390/ma12203293.
Materials (Basel). 2019.
PMID: 31658766
Free PMC article.
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.
Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann PJ.
Schuh P, et al.
Materials (Basel). 2019 Jul 24;12(15):2353. doi: 10.3390/ma12152353.
Materials (Basel). 2019.
PMID: 31344899
Free PMC article.
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Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.
Schuh P, la Via F, Mauceri M, Zielinski M, Wellmann PJ.
Schuh P, et al.
Materials (Basel). 2019 Jul 6;12(13):2179. doi: 10.3390/ma12132179.
Materials (Basel). 2019.
PMID: 31284618
Free PMC article.
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Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide.
Schöler M, Brecht C, Wellmann PJ.
Schöler M, et al.
Materials (Basel). 2019 Aug 6;12(15):2487. doi: 10.3390/ma12152487.
Materials (Basel). 2019.
PMID: 31390722
Free PMC article.
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