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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2018 | 1 |
2019 | 3 |
2020 | 2 |
2024 | 0 |
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6 results
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Page 1
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire.
Nanoscale Res Lett. 2020 May 7;15(1):100. doi: 10.1186/s11671-020-03324-x.
Nanoscale Res Lett. 2020.
PMID: 32382779
Free PMC article.
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles.
Liu H, Peng Y, Han G, Liu Y, Zhong N, Duan C, Hao Y.
Liu H, et al.
Nanoscale Res Lett. 2020 May 24;15(1):120. doi: 10.1186/s11671-020-03353-6.
Nanoscale Res Lett. 2020.
PMID: 32449145
Free PMC article.
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High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation.
Liu H, Han G, Liu Y, Tang X, Yang J, Hao Y.
Liu H, et al.
Nanoscale Res Lett. 2019 Jan 8;14(1):15. doi: 10.1186/s11671-018-2847-0.
Nanoscale Res Lett. 2019.
PMID: 30623254
Free PMC article.
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Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation.
Xu Y, Han G, Liu H, Wang Y, Liu Y, Ao J, Hao Y.
Xu Y, et al.
Nanoscale Res Lett. 2019 Apr 5;14(1):126. doi: 10.1186/s11671-019-2958-2.
Nanoscale Res Lett. 2019.
PMID: 30953229
Free PMC article.
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High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing.
Liu H, Han G, Liu Y, Hao Y.
Liu H, et al.
Nanoscale Res Lett. 2019 Jun 11;14(1):202. doi: 10.1186/s11671-019-3037-4.
Nanoscale Res Lett. 2019.
PMID: 31187310
Free PMC article.
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Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.
Zhang Y, Han G, Wu H, Wang X, Liu Y, Zhang J, Liu H, Zheng H, Chen X, Liu C, Hao Y.
Zhang Y, et al.
Nanoscale Res Lett. 2018 Aug 15;13(1):237. doi: 10.1186/s11671-018-2650-y.
Nanoscale Res Lett. 2018.
PMID: 30112730
Free PMC article.
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