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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.
Lee SH, Park J, Min SR, Kim GU, Jang J, Bae JH, Lee SH, Kang IM. Lee SH, et al. Sci Rep. 2022 Aug 24;12(1):14455. doi: 10.1038/s41598-022-18682-y. Sci Rep. 2022. PMID: 36002621 Free PMC article.
A poly-Si thin film was used within the device due to its low fabrication cost and feasibility in high-density three-dimensional (3-D) memory arrays. We studied the transfer characteristics and memory performances of the single-layer ADG 1 T-DRAMs and the 3-D stacke …
A poly-Si thin film was used within the device due to its low fabrication cost and feasibility in high-density three-dimensional (3-D …