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Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective.
Micromachines (Basel). 2023 May 18;14(5):1074. doi: 10.3390/mi14051074.
Micromachines (Basel). 2023.
PMID: 37241697
Free PMC article.
Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure.
Wang Y, Liu T, Qian L, Wu H, Yu Y, Tao J, Cheng Z, Hu S.
Wang Y, et al.
Micromachines (Basel). 2023 Mar 20;14(3):688. doi: 10.3390/mi14030688.
Micromachines (Basel). 2023.
PMID: 36985094
Free PMC article.
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