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Page 1
Did you mean si min zhang (31 results)?
Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics.
Zhang M, Poumirol JM, Chery N, Rinnert H, Giba AE, Demoulin R, Talbot E, Cristiano F, Hungria T, Paillard V, Gourbilleau F, Bonafos C. Zhang M, et al. Nanoscale. 2023 Apr 27;15(16):7438-7449. doi: 10.1039/d3nr00035d. Nanoscale. 2023. PMID: 37013461
We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals. ...Such surface passivation is a critical …
We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix b …
Active optical modulation of quasi-BICs in Si-VO(2) hybrid metasurfaces.
Zhang Y, Chen D, Ma W, You S, Zhang J, Fan M, Zhou C. Zhang Y, et al. Opt Lett. 2022 Nov 1;47(21):5517-5520. doi: 10.1364/OL.472927. Opt Lett. 2022. PMID: 37219258
In this work, we numerically investigate the optical modulation in resonant Si-VO(2) hybrid metasurfaces. The optical bound states in the continuum (BICs) in an Si dimer nanobar metasurface are studied. ...Moreover, a dynamically tunable optical resonance is achieve …
In this work, we numerically investigate the optical modulation in resonant Si-VO(2) hybrid metasurfaces. The optical bound states in …
First-Principles Study on Si Atom Diffusion Behavior in Ni-Based Superalloys.
Sun Y, Wang Z, Du M, Du Y, Zhang W. Sun Y, et al. Materials (Basel). 2023 Aug 31;16(17):5989. doi: 10.3390/ma16175989. Materials (Basel). 2023. PMID: 37687677 Free PMC article.
The Si atom diffusion behavior in Ni-based superalloys was evaluated based on first-principles calculations. ...The increase of interaction strength between the doped M atom/octahedron constituent atom and Si atom increased Si atom diffusion and decreased the …
The Si atom diffusion behavior in Ni-based superalloys was evaluated based on first-principles calculations. ...The increase of inter …
Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001).
Wang JH, Wang T, Zhang JJ. Wang JH, et al. Nanomaterials (Basel). 2021 Mar 19;11(3):788. doi: 10.3390/nano11030788. Nanomaterials (Basel). 2021. PMID: 33808713 Free PMC article.
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-co …
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum device …
Ionic S(N)i-Si Nucleophilic Substitution in N-Methylaniline-Induced Si-Si Bond Cleavages of Si2Cl6.
Zhang J, Xie J, Lee ME, Zhang L, Zuo Y, Feng S. Zhang J, et al. Chemistry. 2016 Mar 24;22(14):5010-6. doi: 10.1002/chem.201504927. Epub 2016 Feb 24. Chemistry. 2016. PMID: 26916362
An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compounds, is proposed in the N-methylaniline-induced Si-Si bond cleavage in Si2Cl6. ...Special cleavage of the Si-Si bo …
An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compound …
Tuning Inactive Phases in Si-Ti-B Ternary Alloy Anodes to Achieve Stable Cycling for High-Energy-Density Lithium-Ion Batteries.
Liu H, Long Y, Chen Y, Wang Z, Zhang C, Hu R, Zhang X, Yu P. Liu H, et al. ACS Appl Mater Interfaces. 2021 Dec 8;13(48):57317-57325. doi: 10.1021/acsami.1c18150. Epub 2021 Nov 24. ACS Appl Mater Interfaces. 2021. PMID: 34817991
Active amorphous/nanosized Si embedded in an inactive matrix is a strategy to improve the cycle stability of Si anodes. ...Furthermore, the impact of free active Si, the inactive phase, and amorphous Si on the cyclability of Si(100-x-y)Ti(x)B(y) …
Active amorphous/nanosized Si embedded in an inactive matrix is a strategy to improve the cycle stability of Si anodes. ...Fur …
Dual-epitaxy Si/Ge broadband photodetector for application in cryogenic radiometer.
Zhang J, Zhu S, Sun F. Zhang J, et al. Opt Express. 2021 Nov 8;29(23):37489-37502. doi: 10.1364/OE.441465. Opt Express. 2021. PMID: 34808819 Free article.
A dual-epitaxy Si/Ge broadband photodetector covering the wavelength range from 400 nm to 1600 nm was developed and demonstrated. The detector was realized on silicon platform with vertically stacked epitaxial Si and Ge layers in the detector's depletion region, whi …
A dual-epitaxy Si/Ge broadband photodetector covering the wavelength range from 400 nm to 1600 nm was developed and demonstrated. The …
Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires.
Zhang X , Jevasuwan W , Pradel KC , Subramani T , Takei T , Fukata N . Zhang X , et al. Nanoscale. 2018 Dec 7;10(45):21062-21068. doi: 10.1039/c8nr05590d. Epub 2018 Sep 6. Nanoscale. 2018. PMID: 30187068
Core-shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by suppressing impurity scattering due to their band offset structure and selective doping. Boron doped p-type Si/intrinsic-Ge (i-Ge) core- …
Core-shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by sup …
Roles of proteolysis in plant self-incompatibility.
Zhang Y, Zhao Z, Xue Y. Zhang Y, et al. Annu Rev Plant Biol. 2009;60:21-42. doi: 10.1146/annurev.arplant.043008.092108. Annu Rev Plant Biol. 2009. PMID: 19575579 Review.
Self-incompatibility (SI) is a genetically controlled system adopted by many flowering plants to avoid inbreeding and thus to maintain species diversity. ...Here, we review our current understanding of the roles of proteolysis in SI responses of flowering plants....
Self-incompatibility (SI) is a genetically controlled system adopted by many flowering plants to avoid inbreeding and thus to maintai …
14,046 results
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