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Page 1
Did you mean si jin ge (3 results)?
Dual-epitaxy Si/Ge broadband photodetector for application in cryogenic radiometer.
Zhang J, Zhu S, Sun F. Zhang J, et al. Opt Express. 2021 Nov 8;29(23):37489-37502. doi: 10.1364/OE.441465. Opt Express. 2021. PMID: 34808819 Free article.
A dual-epitaxy Si/Ge broadband photodetector covering the wavelength range from 400 nm to 1600 nm was developed and demonstrated. The detector was realized on silicon platform with vertically stacked epitaxial Si and Ge layers in the detector's depleti …
A dual-epitaxy Si/Ge broadband photodetector covering the wavelength range from 400 nm to 1600 nm was developed and demonstrat …
Selective Etching of Si versus Si(1-x)Ge(x) in Tetramethyl Ammonium Hydroxide Solutions with Surfactant.
Choi Y, Cho C, Yoon D, Kang J, Kim J, Kim SY, Suh DC, Ko DH. Choi Y, et al. Materials (Basel). 2022 Oct 5;15(19):6918. doi: 10.3390/ma15196918. Materials (Basel). 2022. PMID: 36234259 Free PMC article.
We investigated the selective etching of Si versus Si1xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1xGex with a higher Ge concentration was etched slower due to …
We investigated the selective etching of Si versus Si1xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetr …
Phase separation in bismuth doped Mg(2)Si(0.5)Ge(0.5) thermoelectric alloy.
Cahana M, Hayun H, Gelbstein Y. Cahana M, et al. Phys Chem Chem Phys. 2022 Sep 14;24(35):21223-21232. doi: 10.1039/d2cp02926j. Phys Chem Chem Phys. 2022. PMID: 36040246
Yet, no such tendency was ever reported for the Mg(2)Si-Mg(2)Ge quasi-binary system, prohibiting the fulfillment of its TE potential. It is currently shown that a similar (yet, less pronounced) tendency of phase separation is also apparent in the Mg(2)Si-Mg(2 …
Yet, no such tendency was ever reported for the Mg(2)Si-Mg(2)Ge quasi-binary system, prohibiting the fulfillment of its TE pot …
Composition Dependent Electrical Transport in Si(1-x) Ge(x) Nanosheets with Monolithic Single-Elementary Al Contacts.
Wind L, Sistani M, Böckle R, Smoliner J, Vukŭsić L, Aberl J, Brehm M, Schweizer P, Maeder X, Michler J, Fournel F, Hartmann JM, Weber WM. Wind L, et al. Small. 2022 Nov;18(44):e2204178. doi: 10.1002/smll.202204178. Epub 2022 Sep 22. Small. 2022. PMID: 36135726
Si(1-x) Ge(x) is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. ...In this respect, the systematic structural and electronic properties of Al-Si(1-x) Ge(x) heterostructures, obtained from a thermally induced excha …
Si(1-x) Ge(x) is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. ...In this respect, the …
High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths.
Fujikata J, Noguchi M, Kawashita K, Katamawari R, Takahashi S, Nishimura M, Ono H, Shimura D, Takahashi H, Yaegashi H, Nakamura T, Ishikawa Y. Fujikata J, et al. Opt Express. 2020 Oct 26;28(22):33123-33134. doi: 10.1364/OE.405447. Opt Express. 2020. PMID: 33114981 Free article.
We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide (Si WG) of a lateral pn junction for high-bandwidth optical interconnect. ...From the photoluminescence and Raman analyses, we confirmed …
We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide ( …
Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface.
Zhang N, Yan J, Wang L, Zhang J, Zhang Z, Miao T, Zheng C, Jiang Z, Hu H, Zhong Z. Zhang N, et al. ACS Nano. 2024 Jan 9;18(1):328-336. doi: 10.1021/acsnano.3c06279. Epub 2023 Dec 26. ACS Nano. 2024. PMID: 38147566
The H-Ge nanostructure is naturally formed within the cubic-Ge epitaxially grown on Si (001) substrates due to the strain-induced nanoscale crystal structure transformation assisted by far-from-equilibrium growth conditions. ...Given the direct-bandgap nature …
The H-Ge nanostructure is naturally formed within the cubic-Ge epitaxially grown on Si (001) substrates due to the stra …
Ge-on-Si waveguides for sensing in the molecular fingerprint regime.
Griskeviciute U, Millar RW, Gallacher K, Valente J, Paul DJ. Griskeviciute U, et al. Opt Express. 2020 Feb 17;28(4):5749-5757. doi: 10.1364/OE.382356. Opt Express. 2020. PMID: 32121790 Free article.
Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. ...These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate …
Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of …
Dislocation sink annihilating threading dislocations in strain-relaxed Si(1-x) Ge (x) layer.
Choi SJ, Kim IH, Park JS, Shim TH, Park JG. Choi SJ, et al. Nanotechnology. 2020 Mar 20;31(12):12LT01. doi: 10.1088/1361-6528/ab58ab. Epub 2019 Nov 18. Nanotechnology. 2020. PMID: 31739301
A generation of a dislocation sink via H(+) implantations in a strain-relaxed Si(0.7)Ge(0.3) layer grown on a Si substrate and a following annealing almost annihilate completely misfit and threading dislocations located near the interface between a relaxed …
A generation of a dislocation sink via H(+) implantations in a strain-relaxed Si(0.7)Ge(0.3) layer grown on a Si substr …
Reversible Al Propagation in Si (x) Ge(1-x) Nanowires: Implications for Electrical Contact Formation.
Luong MA, Robin E, Pauc N, Gentile P, Baron T, Salem B, Sistani M, Lugstein A, Spies M, Fernandez B, den Hertog M. Luong MA, et al. ACS Appl Nano Mater. 2020 Oct 23;3(10):10427-10436. doi: 10.1021/acsanm.0c02303. Epub 2020 Sep 29. ACS Appl Nano Mater. 2020. PMID: 33134884 Free PMC article.
The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted Si (x) Ge(1-x) part, forming an axial Al/Si/Si (x) Ge(1-x) heterostructure. ...This interesting system is promisin …
The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted Si …
Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band.
Li C, Li X, Cai Y, Wang W, Yu M. Li C, et al. Micromachines (Basel). 2022 Dec 30;14(1):108. doi: 10.3390/mi14010108. Micromachines (Basel). 2022. PMID: 36677168 Free PMC article.
We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. ...This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L ba …
We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light dete …
24,387 results
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