Growth mechanism of InGaN nano-umbrellas.
Zhang X, Haas B, Rouvière JL, Robin E, Daudin B.
Zhang X, et al.
Nanotechnology. 2016 Nov 11;27(45):455603. doi: 10.1088/0957-4484/27/45/455603. Epub 2016 Oct 11.
Nanotechnology. 2016.
PMID: 27727147
It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults (SFs) formation, revealing facets favorable to In incorporation. ...
It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. …