Record-Low Subthreshold-Swing Negative-Capacitance 2D Field-Effect Transistors.
Wang Y, Bai X, Chu J, Wang H, Rao G, Pan X, Du X, Hu K, Wang X, Gong C, Yin C, Yang C, Yan C, Wu C, Shuai Y, Wang X, Liao M, Xiong J.
Wang Y, et al.
Adv Mater. 2020 Nov;32(46):e2005353. doi: 10.1002/adma.202005353. Epub 2020 Oct 12.
Adv Mater. 2020.
PMID: 33043512
However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10 mV dec(-1) ) and small-hysteresis NC-FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO(3) t …
However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10 mV dec(-1) ) and small-hysteresis NC-FETs simultaneously …