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Page 1
Expert Consensus on the Diagnosis and Treatment of NRG1/2 Gene Fusion Solid Tumors.
Xu C, Wang Q, Wang D, Wang W, Fang W, Li Z, Liu A, Yu J, Zhong W, Wang Z, Zhang Y, Liu J, Zhang S, Cai X, Liu A, Li W, Zhan P, Liu H, Lv T, Miao L, Min L, Chen Y, Yuan J, Wang F, Jiang Z, Lin G, Huang L, Pu X, Lin R, Liu W, Rao C, Lv D, Yu Z, Li X, Tang C, Zhou C, Zhang J, Xue J, Guo H, Chu Q, Meng R, Wu J, Zhang R, Zhou J, Zhu Z, Li Y, Qiu H, Xia F, Lu Y, Chen X, Ge R, Dai E, Han Y, Pan W, Pang F, He Q, Huang J, Wang K, Wu F, Xu B, Wang L, Zhu Y, Lin L, Xie Y, Lin X, Cai J, Xu L, Li J, Jiao X, Li K, Wei J, Feng H, Wang L, Du Y, Yao W, Shi X, Niu X, Yuan D, Yao Y, Huang J, Feng Y, Zhang Y, Sun P, Wang H, Ye M, Wang Z, Hao Y, Wang Z, Wan B, Lv D, Yang S, Kang J, Zhang J, Zhang C, Ou J, Shi L, Wang Y, Li B, Zhang Z, Li Z, Liu Z, Yang N, Wu L, Wang H, Jin G, Wang G, Wang J, Fang M, Fang Y, Li Y, Wang X, Zhang Y, Zhu X, Shen Y, Ma S, Wang B, Si L, Song Y, Lu Y, Chen J, Song Z. Xu C, et al. Among authors: hao y. Glob Med Genet. 2024 Feb 27;11(1):86-99. doi: 10.1055/s-0044-1781457. eCollection 2024 Jan. Glob Med Genet. 2024. PMID: 38414979 Free PMC article. Review.
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles.
Liu H, Peng Y, Han G, Liu Y, Zhong N, Duan C, Hao Y. Liu H, et al. Among authors: hao y. Nanoscale Res Lett. 2020 May 24;15(1):120. doi: 10.1186/s11671-020-03353-6. Nanoscale Res Lett. 2020. PMID: 32449145 Free PMC article.
This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO(2) on the polarization P and electrical characteristics of TaN/ZrO(2)/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 C, TaN/ZrO(2)/Ge capacitor …
This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO(2) on the polarization P and electrical characte …
ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.
Zhang S, Liu H, Zhou J, Liu Y, Han G, Hao Y. Zhang S, et al. Among authors: hao y. Nanoscale Res Lett. 2021 Feb 2;16(1):21. doi: 10.1186/s11671-020-03468-w. Nanoscale Res Lett. 2021. PMID: 33532927 Free PMC article.
Here we report the ZrO(x)-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under 1 V V(GS) range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO(x)/TaN capaci …
Here we report the ZrO(x)-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under 1 V V(GS) range, which can …