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zheng sheng han
(2 results)?
A FIN-LDMOS with Bulk Electron Accumulation Effect.
Micromachines (Basel). 2023 Jun 10;14(6):1225. doi: 10.3390/mi14061225.
Micromachines (Basel). 2023.
PMID: 37374809
Free PMC article.
Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics.
Zhu M, Lu P, Wang X, Chen Q, Zhu H, Zhang Y, Zhou J, Xu H, Han Z, Han J, Chen R, Li B, Peng LM, Zhang Z.
Zhu M, et al. Among authors: han z.
Small. 2023 Jan;19(1):e2204537. doi: 10.1002/smll.202204537. Epub 2022 Nov 11.
Small. 2023.
PMID: 36366937
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Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors.
Lu P, Zhu M, Zhao P, Fan C, Zhu H, Gao J, Yang C, Han Z, Li B, Liu J, Zhang Z.
Lu P, et al. Among authors: han z.
ACS Appl Mater Interfaces. 2023 Mar 1;15(8):10936-10946. doi: 10.1021/acsami.2c20005. Epub 2023 Feb 15.
ACS Appl Mater Interfaces. 2023.
PMID: 36791232
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Radiation damage and abnormal photoluminescence enhancement of multilayer MoS2under neutron irradiation.
Xiong G, Zhu H, Wang L, Fan L, Zheng Z, Li B, Zhao F, Han Z.
Xiong G, et al. Among authors: han z.
J Phys Condens Matter. 2021 Nov 11;34(5). doi: 10.1088/1361-648X/ac31f8.
J Phys Condens Matter. 2021.
PMID: 34673561
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