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Page 1
Polarization Doping in a GaN-InN System-Ab Initio Simulation.
Materials (Basel). 2023 Jan 31;16(3):1227. doi: 10.3390/ma16031227.
Materials (Basel). 2023.
PMID: 36770233
Free PMC article.
Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers.
Olszewski K, Sobanska M, Dubrovskii VG, Leshchenko ED, Wierzbicka A, Zytkiewicz ZR.
Olszewski K, et al. Among authors: zytkiewicz zr.
Nanomaterials (Basel). 2023 Sep 19;13(18):2587. doi: 10.3390/nano13182587.
Nanomaterials (Basel). 2023.
PMID: 37764616
Free PMC article.
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Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects.
Kierdaszuk J, Kaźmierczak P, Grzonka J, Krajewska A, Przewłoka A, Kaszub W, Zytkiewicz ZR, Sobanska M, Kamińska M, Wysmołek A, Drabińska A.
Kierdaszuk J, et al. Among authors: zytkiewicz zr.
Beilstein J Nanotechnol. 2021 Jun 22;12:566-577. doi: 10.3762/bjnano.12.47. eCollection 2021.
Beilstein J Nanotechnol. 2021.
PMID: 34249590
Free PMC article.
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon.
Tchutchulashvili G, Chusnutdinow S, Mech W, Korona KP, Reszka A, Sobanska M, Zytkiewicz ZR, Sadowski W.
Tchutchulashvili G, et al. Among authors: zytkiewicz zr.
Materials (Basel). 2020 Oct 24;13(21):4755. doi: 10.3390/ma13214755.
Materials (Basel). 2020.
PMID: 33114337
Free PMC article.
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Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer.
Sobanska M, Zytkiewicz ZR, Klosek K, Kruszka R, Golaszewska K, Ekielski M, Gieraltowska S.
Sobanska M, et al. Among authors: zytkiewicz zr.
Nanotechnology. 2020 May 1;31(18):184001. doi: 10.1088/1361-6528/ab6bf2. Epub 2020 Jan 15.
Nanotechnology. 2020.
PMID: 31940593
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X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.
Stanchu HV, Kuchuk AV, Kladko VP, Ware ME, Mazur YI, Zytkiewicz ZR, Belyaev AE, Salamo GJ.
Stanchu HV, et al. Among authors: zytkiewicz zr.
Nanoscale Res Lett. 2016 Dec;11(1):81. doi: 10.1186/s11671-016-1299-7. Epub 2016 Feb 9.
Nanoscale Res Lett. 2016.
PMID: 26860714
Free PMC article.
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High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate.
Stanchu H, Kladko V, Kuchuk AV, Safriuk N, Belyaev A, Wierzbicka A, Sobanska M, Klosek K, Zytkiewicz ZR.
Stanchu H, et al. Among authors: zytkiewicz zr.
Nanoscale Res Lett. 2015 Feb 6;10:51. doi: 10.1186/s11671-015-0766-x. eCollection 2015.
Nanoscale Res Lett. 2015.
PMID: 25852348
Free PMC article.
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