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2021 | 3 |
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Page 1
Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.
Materials (Basel). 2023 Feb 13;16(4):1558. doi: 10.3390/ma16041558.
Materials (Basel). 2023.
PMID: 36837187
Free PMC article.
Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN.
Wang B, Liang F, Zhao D, Ben Y, Yang J, Chen P, Liu Z.
Wang B, et al. Among authors: ben y.
Opt Express. 2021 Feb 1;29(3):3685-3693. doi: 10.1364/OE.416424.
Opt Express. 2021.
PMID: 33770963
Free article.
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Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells.
Ben Y, Liang F, Zhao D, Wang X, Yang J, Liu Z, Chen P.
Ben Y, et al.
Nanomaterials (Basel). 2021 Apr 16;11(4):1023. doi: 10.3390/nano11041023.
Nanomaterials (Basel). 2021.
PMID: 33923643
Free PMC article.
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Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.
Wang Y, Liang F, Zhao D, Ben Y, Yang J, Liu Z, Chen P.
Wang Y, et al. Among authors: ben y.
Nanomaterials (Basel). 2022 Sep 8;12(18):3114. doi: 10.3390/nano12183114.
Nanomaterials (Basel). 2022.
PMID: 36144901
Free PMC article.
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The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties.
Ben Y, Liang F, Zhao D, Yang J, Liu Z, Chen P.
Ben Y, et al.
Nanoscale Res Lett. 2021 Nov 2;16(1):161. doi: 10.1186/s11671-021-03618-8.
Nanoscale Res Lett. 2021.
PMID: 34727236
Free PMC article.
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