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Year | Number of Results |
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2021 | 4 |
2022 | 1 |
2024 | 0 |
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Page 1
Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator.
Polymers (Basel). 2021 Nov 15;13(22):3941. doi: 10.3390/polym13223941.
Polymers (Basel). 2021.
PMID: 34833241
Free PMC article.
High-Entropy van der Waals Materials Formed from Mixed Metal Dichalcogenides, Halides, and Phosphorus Trisulfides.
Ying T, Yu T, Shiah YS, Li C, Li J, Qi Y, Hosono H.
Ying T, et al. Among authors: shiah ys.
J Am Chem Soc. 2021 May 12;143(18):7042-7049. doi: 10.1021/jacs.1c01580. Epub 2021 Apr 29.
J Am Chem Soc. 2021.
PMID: 33926192
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High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure.
Kim J, Shiah YS, Sim K, Iimura S, Abe K, Tsuji M, Sasase M, Hosono H.
Kim J, et al. Among authors: shiah ys.
Adv Sci (Weinh). 2022 Feb;9(5):e2104993. doi: 10.1002/advs.202104993. Epub 2021 Dec 19.
Adv Sci (Weinh). 2022.
PMID: 34927379
Free PMC article.
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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film.
Choi CH, Kim T, Ueda S, Shiah YS, Hosono H, Kim J, Jeong JK.
Choi CH, et al. Among authors: shiah ys.
ACS Appl Mater Interfaces. 2021 Jun 23;13(24):28451-28461. doi: 10.1021/acsami.1c04210. Epub 2021 Jun 11.
ACS Appl Mater Interfaces. 2021.
PMID: 34111928
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