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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
Fatahilah MF, Yu F, Strempel K, Römer F, Maradan D, Meneghini M, Bakin A, Hohls F, Schumacher HW, Witzigmann B, Waag A, Wasisto HS. Fatahilah MF, et al. Sci Rep. 2019 Jul 16;9(1):10301. doi: 10.1038/s41598-019-46186-9. Sci Rep. 2019. PMID: 31311946 Free PMC article.
A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the realization of vertically aligned GaN NWs on metalorganic vapor-phase epitaxy (MOVPE)-based GaN thin films with specific dopi …
A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the …
GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.
Yu F, Yao S, Römer F, Witzigmann B, Schimpke T, Strassburg M, Bakin A, Schumacher HW, Peiner E, Wasisto HS, Waag A. Yu F, et al. Nanotechnology. 2017 Mar 3;28(9):095206. doi: 10.1088/1361-6528/aa57b6. Epub 2017 Jan 9. Nanotechnology. 2017. PMID: 28067211
Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combin …
Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel …