Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
Fatahilah MF, Yu F, Strempel K, Römer F, Maradan D, Meneghini M, Bakin A, Hohls F, Schumacher HW, Witzigmann B, Waag A, Wasisto HS.
Fatahilah MF, et al.
Sci Rep. 2019 Jul 16;9(1):10301. doi: 10.1038/s41598-019-46186-9.
Sci Rep. 2019.
PMID: 31311946
Free PMC article.
A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the realization of vertically aligned GaN NWs on metalorganic vapor-phase epitaxy (MOVPE)-based GaN thin films with specific dopi …
A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the …