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Year | Number of Results |
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Page 1
Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator.
Nat Commun. 2016 Aug 5;7:12356. doi: 10.1038/ncomms12356.
Nat Commun. 2016.
PMID: 27492864
Free PMC article.
Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device.
Kawasugi Y, Seki K, Tajima S, Pu J, Takenobu T, Yunoki S, Yamamoto HM, Kato R.
Kawasugi Y, et al.
Sci Adv. 2019 May 10;5(5):eaav7282. doi: 10.1126/sciadv.aav7282. eCollection 2019 May.
Sci Adv. 2019.
PMID: 31093527
Free PMC article.
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Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.
Sato Y, Kawasugi Y, Suda M, Yamamoto HM, Kato R.
Sato Y, et al. Among authors: kawasugi y.
Nano Lett. 2017 Feb 8;17(2):708-714. doi: 10.1021/acs.nanolett.6b03817. Epub 2017 Jan 10.
Nano Lett. 2017.
PMID: 28038313
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Strain-tunable superconducting field-effect transistor with an organic strongly-correlated electron system.
Suda M, Kawasugi Y, Minari T, Tsukagoshi K, Kato R, Yamamoto HM.
Suda M, et al. Among authors: kawasugi y.
Adv Mater. 2014 Jun 4;26(21):3490-5. doi: 10.1002/adma.201305797. Epub 2014 Mar 24.
Adv Mater. 2014.
PMID: 24664491
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Field-induced carrier delocalization in the strain-induced mott insulating state of an organic superconductor.
Kawasugi Y, Yamamoto HM, Tajima N, Fukunaga T, Tsukagoshi K, Kato R.
Kawasugi Y, et al.
Phys Rev Lett. 2009 Sep 11;103(11):116801. doi: 10.1103/PhysRevLett.103.116801. Epub 2009 Sep 8.
Phys Rev Lett. 2009.
PMID: 19792389
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