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Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation.
Materials (Basel). 2022 May 27;15(11):3818. doi: 10.3390/ma15113818.
Materials (Basel). 2022.
PMID: 35683115
Free PMC article.
Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding.
Yang S, Deng N, Qu Y, Wang K, Yuan Y, Hu W, Wu S, Wang H.
Yang S, et al. Among authors: qu y.
Materials (Basel). 2022 Apr 25;15(9):3115. doi: 10.3390/ma15093115.
Materials (Basel). 2022.
PMID: 35591449
Free PMC article.
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