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2019 | 2 |
2020 | 2 |
2024 | 0 |
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Page 1
Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors.
Nanomaterials (Basel). 2019 Jun 14;9(6):882. doi: 10.3390/nano9060882.
Nanomaterials (Basel). 2019.
PMID: 31207877
Free PMC article.
Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors.
Vaknin Y, Dagan R, Rosenwaks Y.
Vaknin Y, et al.
Nanomaterials (Basel). 2020 Nov 26;10(12):2346. doi: 10.3390/nano10122346.
Nanomaterials (Basel). 2020.
PMID: 33255993
Free PMC article.
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Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening.
Dagan R, Vaknin Y, Weisman D, Amit I, Rosenwaks Y.
Dagan R, et al. Among authors: vaknin y.
ACS Appl Mater Interfaces. 2019 Nov 27;11(47):44406-44412. doi: 10.1021/acsami.9b12611. Epub 2019 Nov 14.
ACS Appl Mater Interfaces. 2019.
PMID: 31724843
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Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors.
Dagan R , Vaknin Y , Rosenwaks Y .
Dagan R , et al. Among authors: vaknin y.
Nanoscale. 2020 Apr 30;12(16):8883-8889. doi: 10.1039/d0nr01379j.
Nanoscale. 2020.
PMID: 32259170
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