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Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC.
RSC Adv. 2024 May 22;14(23):16574-16583. doi: 10.1039/d4ra02563f. eCollection 2024 May 15.
RSC Adv. 2024.
PMID: 38779386
Free PMC article.
Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC.
Yuan W, Pei Y, Li Y, Guo N, Zhang X, Liu X.
Yuan W, et al. Among authors: pei y.
Micromachines (Basel). 2024 Apr 29;15(5):600. doi: 10.3390/mi15050600.
Micromachines (Basel). 2024.
PMID: 38793173
Free PMC article.
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