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New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device.
Materials (Basel). 2022 May 19;15(10):3640. doi: 10.3390/ma15103640.
Materials (Basel). 2022.
PMID: 35629667
Free PMC article.
Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640.
Chen YY, Lin SJ, Chang SY.
Chen YY, et al.
Materials (Basel). 2022 Sep 28;15(19):6738. doi: 10.3390/ma15196738.
Materials (Basel). 2022.
PMID: 36234385
Free PMC article.
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