Yeong-Her Wang - Search Results

Year	Number of Results
2003	1
2004	1
2006	3
2007	2
2014	3
2015	2
2016	3
2017	2
2018	1
2020	2
2021	4
2022	4
2023	1
2024	0

1

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al₂O₃/ZrO₂ Stacked Gate Dielectrics.

Huang CY, Mazumder S, Lin PC, Lee KW, Wang YH. Huang CY, et al. Among authors: wang yh. Materials (Basel). 2022 Oct 5;15(19):6895. doi: 10.3390/ma15196895. Materials (Basel). 2022. PMID: 36234237 Free PMC article.

2

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods.

Su TH, Lee KJ, Wang LW, Chang YC, Wang YH. Su TH, et al. Among authors: wang yh. Materials (Basel). 2020 Jun 17;13(12):2755. doi: 10.3390/ma13122755. Materials (Basel). 2020. PMID: 32560505 Free PMC article.

3

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer.

Lee KJ, Lin WS, Wang LW, Lin HN, Wang YH. Lee KJ, et al. Among authors: wang yh. Nanomaterials (Basel). 2022 Dec 10;12(24):4412. doi: 10.3390/nano12244412. Nanomaterials (Basel). 2022. PMID: 36558265 Free PMC article.

4

Highly Uniform Resistive Switching Properties of Solution-Processed Silver-Embedded Gelatin Thin Film.

Chang YC, Lee CJ, Wang LW, Wang YH. Chang YC, et al. Among authors: wang yh. Small. 2018 Mar;14(13):e1703888. doi: 10.1002/smll.201703888. Epub 2018 Feb 16. Small. 2018. PMID: 29450966

5

Remarkable Reduction in I_G with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al₂O₃/SiO₂ Stack Layer AlGaN/GaN MOS-HEMT.

Mazumder S, Pal P, Lee KW, Wang YH. Mazumder S, et al. Among authors: wang yh. Materials (Basel). 2022 Dec 19;15(24):9067. doi: 10.3390/ma15249067. Materials (Basel). 2022. PMID: 36556876 Free PMC article.

6

Performance Enhancement in N₂ Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO_X Gate Dielectric with Γ-Shaped Gate Engineering.

Yang SK, Mazumder S, Wu ZG, Wang YH. Yang SK, et al. Among authors: wang yh. Materials (Basel). 2021 Mar 21;14(6):1534. doi: 10.3390/ma14061534. Materials (Basel). 2021. PMID: 33801062 Free PMC article.

7

1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor.

Lee KJ, Chang YC, Lee CJ, Wang LW, Wang YH. Lee KJ, et al. Among authors: wang yh. Materials (Basel). 2017 Dec 9;10(12):1408. doi: 10.3390/ma10121408. Materials (Basel). 2017. PMID: 29232828 Free PMC article.

8

Proton-exchanged wet etching of recessed-structure SAW filter.

Tsai SH, Wang NF, Houng MP, Wang YH. Tsai SH, et al. Among authors: wang yh. IEEE Trans Ultrason Ferroelectr Freq Control. 2003 Sep;50(9):1219-22. doi: 10.1109/tuffc.2003.1235335. IEEE Trans Ultrason Ferroelectr Freq Control. 2003. PMID: 14561040

9

High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO₂ Thin Film with Non-Identical Pulse Waveforms.

Lee KJ, Weng YC, Wang LW, Lin HN, Pal P, Chu SY, Lu D, Wang YH. Lee KJ, et al. Among authors: wang yh. Nanomaterials (Basel). 2022 Sep 19;12(18):3252. doi: 10.3390/nano12183252. Nanomaterials (Basel). 2022. PMID: 36145040 Free PMC article.

10

Synthesis of the gold nanodumbbells by electrochemical method.

Huang CJ, Chiu PH, Wang YH, Yang CF. Huang CJ, et al. Among authors: wang yh. J Colloid Interface Sci. 2006 Nov 15;303(2):430-6. doi: 10.1016/j.jcis.2006.07.073. Epub 2006 Aug 2. J Colloid Interface Sci. 2006. PMID: 16930612

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