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CMOS platform for atomic-scale device fabrication.
Škereň T, Pascher N, Garnier A, Reynaud P, Rolland E, Thuaire A, Widmer D, Jehl X, Fuhrer A. Škereň T, et al. Among authors: jehl x. Nanotechnology. 2018 Oct 26;29(43):435302. doi: 10.1088/1361-6528/aad7ab. Epub 2018 Aug 2. Nanotechnology. 2018. PMID: 30070975
Gate-based high fidelity spin readout in a CMOS device.
Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T. Urdampilleta M, et al. Among authors: jehl x. Nat Nanotechnol. 2019 Aug;14(8):737-741. doi: 10.1038/s41565-019-0443-9. Epub 2019 May 13. Nat Nanotechnol. 2019. PMID: 31086305
Few electron limit of n-type metal oxide semiconductor single electron transistors.
Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M. Prati E, et al. Among authors: jehl x. Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204. Nanotechnology. 2012. PMID: 22552118
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.
Crippa A, Maurand R, Bourdet L, Kotekar-Patil D, Amisse A, Jehl X, Sanquer M, Laviéville R, Bohuslavskyi H, Hutin L, Barraud S, Vinet M, Niquet YM, De Franceschi S. Crippa A, et al. Among authors: jehl x. Phys Rev Lett. 2018 Mar 30;120(13):137702. doi: 10.1103/PhysRevLett.120.137702. Phys Rev Lett. 2018. PMID: 29694195