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Showing results for wan yi gan
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Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers.
Wan Y, Hu T, Mao X, Fu J, Yuan K, Song Y, Gan X, Xu X, Xue M, Cheng X, Huang C, Yang J, Dai L, Zeng H, Kan E. Wan Y, et al. Phys Rev Lett. 2022 Feb 11;128(6):067601. doi: 10.1103/PhysRevLett.128.067601. Phys Rev Lett. 2022. PMID: 35213175
Epitaxial Single-Layer MoS(2) on GaN with Enhanced Valley Helicity.
Wan Y, Xiao J, Li J, Fang X, Zhang K, Fu L, Li P, Song Z, Zhang H, Wang Y, Zhao M, Lu J, Tang N, Ran G, Zhang X, Ye Y, Dai L. Wan Y, et al. Adv Mater. 2018 Feb;30(5). doi: 10.1002/adma.201703888. Epub 2017 Dec 19. Adv Mater. 2018. PMID: 29265489
Here, it is demonstrated that epitaxially grown single-layer MoS(2) on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers thr …
Here, it is demonstrated that epitaxially grown single-layer MoS(2) on a lattice-matched GaN substrate, possessing a type-I band alig …