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2021 | 2 |
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Page 1
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.
Materials (Basel). 2022 Nov 25;15(23):8415. doi: 10.3390/ma15238415.
Materials (Basel). 2022.
PMID: 36499910
Free PMC article.
Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions.
Amir W, Chakraborty S, Kwon HM, Kim TW.
Amir W, et al.
Materials (Basel). 2023 Jun 19;16(12):4469. doi: 10.3390/ma16124469.
Materials (Basel). 2023.
PMID: 37374651
Free PMC article.
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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs.
Shin KY, Shin JW, Amir W, Chakraborty S, Shim JP, Lee ST, Jang H, Shin CS, Kwon HM, Kim TW.
Shin KY, et al. Among authors: amir w.
Materials (Basel). 2023 Sep 9;16(18):6138. doi: 10.3390/ma16186138.
Materials (Basel). 2023.
PMID: 37763415
Free PMC article.
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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Amir W, Shin JW, Shin KY, Kim JM, Cho CY, Park KH, Hoshi T, Tsutsumi T, Sugiyama H, Matsuzaki H, Kim TW.
Amir W, et al.
Sci Rep. 2021 Nov 17;11(1):22401. doi: 10.1038/s41598-021-01768-4.
Sci Rep. 2021.
PMID: 34789786
Free PMC article.
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Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Amir W, Shin JW, Shin KY, Kim JM, Cho CY, Park KH, Hoshi T, Tsutsumi T, Sugiyama H, Matsuzaki H, Kim TW.
Amir W, et al.
Sci Rep. 2021 Dec 2;11(1):23667. doi: 10.1038/s41598-021-02854-3.
Sci Rep. 2021.
PMID: 34857865
Free PMC article.
No abstract available.
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