Coherence Characteristics of a GaAs Single Heavy-Hole Spin Qubit Using a Modified Single-Shot Latching Readout Technique

Nanomaterials (Basel). 2023 Mar 6;13(5):950. doi: 10.3390/nano13050950.

Abstract

We present an experimental study of the coherence properties of a single heavy-hole spin qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We use a modified spin-readout latching technique in which the second quantum dot serves both as an auxiliary element for a fast spin-dependent readout within a 200 ns time window and as a register for storing the spin-state information. To manipulate the single-spin qubit, we apply sequences of microwave bursts of various amplitudes and durations to make Rabi, Ramsey, Hahn-echo, and CPMG measurements. As a result of the qubit manipulation protocols combined with the latching spin readout, we determine and discuss the achieved qubit coherence times: T1, TRabi, T2*, and T2CPMG vs. microwave excitation amplitude, detuning, and additional relevant parameters.

Keywords: GaAs; Rabi oscillations; Ramsey; single hole; spin qubit; spin readout.

Grants and funding

V.M. and S.S. thank the Natural Sciences and Engineering Research Council of Canada for financial support, grant No 04089-2019.