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Page 1
Ferroelectric Devices for Content-Addressable Memory.
Nanomaterials (Basel). 2022 Dec 19;12(24):4488. doi: 10.3390/nano12244488.
Nanomaterials (Basel). 2022.
PMID: 36558341
Free PMC article.
Review.
Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire.
Popov VP, Antonov VA, Miakonkikh AV, Rudenko KV.
Popov VP, et al. Among authors: antonov va.
Nanomaterials (Basel). 2022 Sep 28;12(19):3394. doi: 10.3390/nano12193394.
Nanomaterials (Basel). 2022.
PMID: 36234528
Free PMC article.
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Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.
Popov VP, Tikhonenko FV, Antonov VA, Tyschenko IE, Miakonkikh AV, Simakin SG, Rudenko KV.
Popov VP, et al. Among authors: antonov va.
Nanomaterials (Basel). 2021 Jan 22;11(2):291. doi: 10.3390/nano11020291.
Nanomaterials (Basel). 2021.
PMID: 33499413
Free PMC article.
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