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Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
RSC Adv. 2022 Apr 14;12(19):11649-11656. doi: 10.1039/d1ra08103a. eCollection 2022 Apr 13.
RSC Adv. 2022.
PMID: 35432948
Free PMC article.
An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.
Kiran S, Mumtaz U, Mustafa A, Imran M, Hussain F, Rasheed U, Khalil RMA, Khera EA, Nazir A.
Kiran S, et al. Among authors: rasheed u.
RSC Adv. 2023 Apr 11;13(16):11192-11200. doi: 10.1039/d3ra00078h. eCollection 2023 Apr 3.
RSC Adv. 2023.
PMID: 37056964
Free PMC article.
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Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.
Kiran S, Mumtaz U, Mustafa A, Imran M, Hussain F, Rasheed U, Khalil RMA, Khera EA, Nazir A.
Kiran S, et al. Among authors: rasheed u.
RSC Adv. 2023 Apr 25;13(19):12925. doi: 10.1039/d3ra90038j. eCollection 2023 Apr 24.
RSC Adv. 2023.
PMID: 37114018
Free PMC article.
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