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A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si1-xGe(x) Channel.
J Nanosci Nanotechnol. 2015 Mar;15(3):2173-8. doi: 10.1166/jnn.2015.10227.
J Nanosci Nanotechnol. 2015.
PMID: 26413636
Development of Equivalent Material Properties of Microbump for Simulating Chip Stacking Packaging.
Lee CC, Tzeng TL, Huang PC.
Lee CC, et al. Among authors: tzeng tl.
Materials (Basel). 2015 Aug 7;8(8):5121-5137. doi: 10.3390/ma8085121.
Materials (Basel). 2015.
PMID: 28793495
Free PMC article.
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