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Year | Number of Results |
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2020 | 2 |
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Page 1
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
Opt Express. 2020 Jan 6;28(1):665-675. doi: 10.1364/OE.28.000665.
Opt Express. 2020.
PMID: 32118989
Free article.
Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate.
Das S, Lenka TR, Talukdar FA, Sadaf SM, Velpula RT, Nguyen HPT.
Das S, et al. Among authors: lenka tr.
Appl Opt. 2022 Oct 20;61(30):8951-8958. doi: 10.1364/AO.470083.
Appl Opt. 2022.
PMID: 36607020
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Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence.
Das S, Lenka TR, Talukdar FA, Nguyen HPT, Crupi G.
Das S, et al. Among authors: lenka tr.
Micromachines (Basel). 2023 Oct 13;14(10):1926. doi: 10.3390/mi14101926.
Micromachines (Basel). 2023.
PMID: 37893363
Free PMC article.
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Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure.
Velpula RT, Jain B, Bui HQT, Shakiba FM, Jude J, Tumuna M, Nguyen HD, Lenka TR, Nguyen HPT.
Velpula RT, et al. Among authors: lenka tr.
Appl Opt. 2020 Jun 10;59(17):5276-5281. doi: 10.1364/AO.394149.
Appl Opt. 2020.
PMID: 32543550
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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
Bui HQT, Velpula RT, Jain B, Aref OH, Nguyen HD, Lenka TR, Nguyen HPT.
Bui HQT, et al. Among authors: lenka tr.
Micromachines (Basel). 2019 Jul 24;10(8):492. doi: 10.3390/mi10080492.
Micromachines (Basel). 2019.
PMID: 31344846
Free PMC article.
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