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Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics.
Materials (Basel). 2019 Feb 26;12(5):689. doi: 10.3390/ma12050689.
Materials (Basel). 2019.
PMID: 30813566
Free PMC article.
Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation.
Nakamura T, Yoshino M, Toyabe T, Yasuda A.
Nakamura T, et al. Among authors: toyabe t.
Micromachines (Basel). 2024 Jan 18;15(1):147. doi: 10.3390/mi15010147.
Micromachines (Basel). 2024.
PMID: 38258266
Free PMC article.
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Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.
Noda K, Wada Y, Toyabe T.
Noda K, et al. Among authors: toyabe t.
Phys Chem Chem Phys. 2015 Oct 28;17(40):26535-40. doi: 10.1039/c4cp01792g.
Phys Chem Chem Phys. 2015.
PMID: 24922359
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